UHV (ultra-high vacuum) ALD provides thin films through the atomic layer deposition process with exceptional purity, free from contaminants such as carbon or oxygen. Layer growth is performed in an isolated chamber which is kept under UHV conditions. A separate load-lock facilitates transfer of samples from atmosphere and into the UHV chamber. Can be equipped with an optional plasma source for PEALD and a biasable stage for atomic layer etching (ALE).
Example system: SVTA Model UHV PEALD 4-1
The UHV-PEALD system is a proven ALD platform for up to 4″ (100 mm) wafer sizes, allowing for both PEALD and thermal ALD deposition in a UHV environment. It is the only system on the market that offers high efficiency processing of reactive and ultra-pure materials. Cross transfer into other UHV systems or a Glove Box is optional
- Substrate size up to 4″
- Base pressure < 1e-9 torr
- Transfer to buffer or UHV system (analysis/growth)
- Highly efficient and uniform ICP plasma with remote or direct exposure
- Surface cleaning (e.g. oxide removal)
- ALE mode with bias up to 500 V
- High temperature (up to 700 °C) annealing option
- Rapid in-situ process and plasma diagnostics
