Plasma-Enhanced ALD (PEALD) adds an RF-Plasma to the ALD process. This plasma is used to create active atomic species which serve as a precursor during the deposition process. For example oxygen plasma is used for oxide deposition or nitrogen plasma in nitride films. This approach has the advantage of requiring lower substrate temperatures and safer/simpler oxidant precursors. RoboALD computer-based recipe control coordinates precursor introduction, gas flows and RF plasma energizing for reliable process runs. The SVTA RF-Plasma source can be incorporated into most SVTA ALD systems to provide PEALD functionality.
