SVTA designs and constructs molecular beam epitaxy systems with a variety of options, including accommodating growth on large 6″ or 8″ diameter substrates. The modular system concept is a flexible and reliable way of adapting to different customer needs. It can be configured as an III-V MBE System, an II-VI MBE System, or for other materials. The base system consists of two modules: Epitaxy Growth Module and Load Lock/Buffer/Preparation Module. Each module has its own independent UHV pumping system and can be isolated from each other by a gate valve.
The system can be configured combining the use of solid and gas sources for deposition, including SVTA’s Valved Sources and Cracking Sources. The flexibility of the MBE system configuration ensures that the system can be used for a wide variety of application and development purposes. It comes standard in either a linear or right angle configuration, or a “cluster tool” configuration with a central distribution chamber. Custom system configurations with multiple growth chambers (for example one for III-V MBE and another for II-VI MBE) are also available, as well as integration of analysis modules.
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SVTA Oxide MBE System for 8″ Substrate
SVTA Right Angle MBE Configuration