The RF-4.5-I plasma source is designed for high purity ion beam assisted nitride and oxide film growth. Its filament-less design enables operation with reactive as well as inert gases. It provides ion beams with high uniformity over up to 3” wafers with ion current densities of several mA/cm2. User changeable extraction systems allows operation of the source in ion source mode, ion assisted mode or as neutral atom source. Applications of the source include ion beam etching, sputtering or ion assisted deposition with lowest contamination levels. Different grid materials and shapes are available customizing the beam profile. The source can be fully automated with the optional ROBO-RF control system.
Features:
- For N2, O2, and other Reactive or Inert Gases
- Ion Source and Neutral/Atom Source Operation
- High Ion Current Densities
- Filament-less, Full UHV Compatible Design
- Custom Extraction Optics for Beam Shaping
- Manual and Automatic Tuning Matching Network
- Charge Neutralization or Suppression Option
- Full Automation Package with Safety Interlock
- Applications include Ion Beam Etching, Sputtering,
Ion Assisted Deposition and Cleaning
Specifications | |
| RF Power Level: | 200-900 W |
| Gas Flow Rate: | 0.5-10 sccm |
| Mounting Flange: | 4.5″ CF |
| Source Diameter (in vacuum): | 2.35″ |
| Water Cooling: | 0.17 gpm |
| Matching Network: | manual or automatic |
| Beam Diameter: | 20 mm |
| Beam Current Density: | 3 mA/cm2 |
| Beam Energy: | 50-1000 V (higher optional) |
RF Ion Source
Plot of Beam Current vs. Power Level