Thermal ALD is the most standard form of the atomic layer deposition process to create thin films. ALD is renowned for its ability to create layers having high uniformity and conformality, with thickness precision down to one monolayer. Precursors such as water and metalorganic vapors are controlled through high speed valves and coordinated through the RoboALD recipe control software. Systems can be equipped with an optional plasma source for PEALD and a biasable stage for atomic layer etching (ALE).
Example system: SVTA Model ALD-P-100B
The ALD-P-100B system is a proven ALD platform for up to 4″ (100 mm) wafer sizes, allowing for both thermal ALD and PEALD deposition. Sample introduction is rapid and convenient with a quick hatch or optional load lock. Integration with in-situ metrology tools and the RoboALD software automation system for process reproducibility. Fully upgradable to UHV.
- Substrate size up to 4″ (100 mm), thickness deviation < +/- 1%
- Base pressure < 3e-3 torr with standard pumping
- Optional temperature controlled hot wall
- Up to 8 individually controlled precursor introduction ports
- Close coupled sample heater to 350 °C (500 °C with hot wall)
- Capacitance manometer for in run pressure monitoring
- High temperature (up to 700 °C) annealing option
- Optional quartz crystal monitoring and residual gas analysis
