The SVTA Valved Cracker Source enables generation of fully dissociated, atomic species from solid group VI elements such as S, Se and Te. It incorporates a large capacity bulk effusion zone, a heated valve and cracking zone. Thermal cracking produces smaller-sized species for highest reactivity and improved material incorporation. Its high speed valve mechanism allows rapid flux modulation and conservation of material charge when in idle mode.

Custom aperture and manifold designs are available upon request to tailor the flux to individual applications.

Specifications
Crucible Size:100, 200 or 500 cc
Operating Temperature (max):500°C (bulk), 700°C (cracker)
Mounting Flange:4.5″ CF
Standard In Vacuum Length:12″ (30.5 cm)
Power Consumption (max):300 W
Rate Stability:+/- 1%
Access:25′ cable length standard (VCEC-25)

Optional equipment:

  • Power supply (VCPS-3K)
  • Valve speed: 250 msec
  • Temperature controller (VCTC-2)
  • Motorized valve and controller (VC45-MRS)
  • Shutter controller
  • Cracking tube cooling shroud
Valved thermal effusion cell for molecular beam epitaxy deposition

Photo of S/Se/Te valved cracker

Graph showing valve position versus beam flux in thin film deposition system

Plot of deposition rate versus valve position

Temperature vs beam pressure graph for thin film semiconductor materials

Plot of Se6/Se2 intensity ratio versus temperature

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