The SVTA RF Valved Cracker Source enables generation of fully dissociated, atomic species from solid group V and group VI elements. It incorporates a large capacity effusion zone, a heated valve zone and an RF cracking zone. RF cracking produces thermal energies much higher than heated filaments can provide, resulting in fully cracked species for highest reactivity and improved material incorporation. Its high speed valve mechanism allows rapid flux modulation and conservation of material charge when in idle mode.

Custom aperture and chamber designs are available upon request to tailor the flux to individual applications. Optional equipment such as RoboRF provide automated operation and allow the user to log data as well as write recipes for reproducible deposition.

Features:

  • Models available for S, Se, As, Sb and Te
  • Highest dissociation efficiency
  • Improved material yield
  • Optical port for plasma monitoring
  • Custom apertures for beam shaping
  • Valved flux control
Specifications
RF Power Level:100-500 W
Gas Flow Rate:0.1-2.0 sccm
Mounting Flange:4.5″ CF
Source Diameter (in vacuum):2.35″
Water Cooling:0.17 gpm
RF Matching Network:manual tuning (automatic optional)
Plasma Chamber:PBN, alumina or quartz
Cylindrical stainless steel vacuum chamber used in thin film deposition systems

Valved RF Cracking Source

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Whether you are a researcher, professor, scientist, or student performing R&D in thin film materials, or a business that manufactures high-power laser diode arrays, we will take care of you! Contact us with your questions and needs.